Optical gain in ZnS epilayers

Solid State Communications

Volumn 98, Issue 8, 1996, Pages 695-700

  Valenta, J ^a,c   Guennani, D ^a   Manar, A ^a,d   Honerlage B ^a   Cloitre, T ^b   Aulombard, R L ^b  

^a INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c CHARLES UNIVERSITY   (Czech Republic)

^d IBN ZOHR UNIVERSITY   (Morocco)

Author keywords

A. semiconductors; B. epitaxy; D. excitons; E. nonlinear optics

Indexed keywords

EMISSION SPECTROSCOPY; EXCITONS; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NONLINEAR OPTICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; ZINC SULFIDE;

OPTICAL GAIN; VARIABLE STRIPE LENGTH METHOD;

SEMICONDUCTING FILMS;

EID: 0030150424     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00107-X     Document Type: Article

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