The Child-Langmuir law as a model for electron transport in semiconductors

Solid-State Electronics

Volumn 39, Issue 5, 1996, Pages 737-744

  Ben Abdallah, Naoufel ^a   Degond, Pierre ^a   Yamnahakki, Ahmed ^b  

^a CNRS   (France)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; SCHOTTKY BARRIER DIODES; TEMPERATURE;

BOLTZMANN EQUATION; CHILD LANGMUIR LAW; COMPUTATIONAL COST; THERMAL ENERGY;

SEMICONDUCTOR MATERIALS;

EID: 0030150206     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00149-2     Document Type: Article

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