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Materials Chemistry and Physics

Volumn 44, Issue 2, 1996, Pages 151-155

Optical properties of AIIBV semiconductor compounds

(6) Mudryi, A V a Patuk, A I a Shakin, I A a Kalmykov, A E a Marenkin, S F b Raukhman, A M b

a INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS (Belarus)

b KURNAKOV INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY (Russian Federation)

Author keywords

Infrared spectroscopy; Luminescence; Semiconductor compounds

Indexed keywords

BAND STRUCTURE; CRYSTAL GROWTH; DEFECTS; INFRARED SPECTROSCOPY; LIGHT ABSORPTION; LIGHT TRANSMISSION; LUMINESCENCE; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS;

CADMIUM ARSENIDE; LUMINESCENCE CENTERS; RADIATIVE RECOMBINATION MECHANISMS; RESIDUAL IMPURITY ATOMS; SEMICONDUCTOR COMPOUNDS; ZINC ARSENIDE;

SEMICONDUCTOR MATERIALS;

EID: 0030150168 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/0254-0584(95)01668-K Document Type: Article

Times cited : (8)

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