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Volumn 36, Issue 5, 1996, Pages 325-331

Estimation of low temperature characteristics of JFETs from their room-temperature characteristics

Author keywords

Characteristics; JFETs; Low temperature; Room temperature

Indexed keywords

CRYOGENICS; ELECTRIC VARIABLES MEASUREMENT; ESTIMATION; HYBRID INTEGRATED CIRCUITS; INTEGRATED CIRCUIT LAYOUT; LOW TEMPERATURE PROPERTIES; SEMICONDUCTOR DEVICE TESTING;

EID: 0030150121     PISSN: 00112275     EISSN: None     Source Type: Journal    
DOI: 10.1016/0011-2275(96)81102-7     Document Type: Article
Times cited : (6)

References (12)
  • 2
    • 0024057414 scopus 로고
    • Superconductor-semiconductor hybrid devices, circuits and sytems
    • Vanduzer, T. Superconductor-semiconductor hybrid devices, circuits and sytems Cryogenics (1988) 28 527-531
    • (1988) Cryogenics , vol.28 , pp. 527-531
    • Vanduzer, T.1
  • 3
    • 0016091407 scopus 로고
    • Semiconductor devices suitable for use in cryogenic environments
    • Lengeler, B. Semiconductor devices suitable for use in cryogenic environments Cryogenics (1974) 14 439-447
    • (1974) Cryogenics , vol.14 , pp. 439-447
    • Lengeler, B.1
  • 4
    • 84937350176 scopus 로고
    • Thermal noise in field effect transistors
    • Van der Zeil, A. Thermal noise in field effect transistors Proc. IRE (1962) 50 1808-1812
    • (1962) Proc. IRE , vol.50 , pp. 1808-1812
    • Van Der Zeil, A.1
  • 5
    • 0000181447 scopus 로고
    • Thermal effects in JFET and MOSFET devices at cryogenic temperatures
    • Sesnic, S.S. and Craig, G.R. Thermal effects in JFET and MOSFET devices at cryogenic temperatures IEEE Trans. Electron Devices (1972) 19 933-942
    • (1972) IEEE Trans. Electron Devices , vol.19 , pp. 933-942
    • Sesnic, S.S.1    Craig, G.R.2
  • 6
    • 0024019802 scopus 로고
    • Silicon junction field effect transistors at 4.2 K
    • Nawrocki, W. Silicon junction field effect transistors at 4.2 K Cryogenics (1988) 28 394-397
    • (1988) Cryogenics , vol.28 , pp. 394-397
    • Nawrocki, W.1
  • 9
    • 30244483479 scopus 로고    scopus 로고
    • Drift velocity of electrons in silicon at high electric fields from 4.2 K to 300 K
    • 19
    • Rodriguez, V. and Nicolet, M.A. Drift velocity of electrons in silicon at high electric fields from 4.2 K to 300 K J Appl Phys (19) 40 496-498
    • J Appl Phys , vol.40 , pp. 496-498
    • Rodriguez, V.1    Nicolet, M.A.2
  • 11
    • 30244434835 scopus 로고
    • Theory and application of FETs: Part I. Theory and DC characteristics
    • Cobbold, R.S.C. and Troffinmenkoff, F.N. Theory and application of FETs: Part I. Theory and DC characteristics Proc. IEEE (1964) 111 1981-1992
    • (1964) Proc. IEEE , vol.111 , pp. 1981-1992
    • Cobbold, R.S.C.1    Troffinmenkoff, F.N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.