Causes of cracking of vacuum deposited thick amorphous silicon film

Materials Science and Engineering B

Volumn 39, Issue 1, 1996, Pages 21-24

  Avrutin, V S ^a   Izumskaya, N F ^a   Hartman, Y M ^a   Andreeva, A V ^a   Vyatkin, A F ^a   Melnik, N N ^b  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

Amorphous films; Cracking; Silicon

Indexed keywords

AMORPHOUS SILICON; CRACK INITIATION; CRYSTALLINE MATERIALS; DEPOSITION; RELAXATION PROCESSES; STRESSES; SUBSTRATES; VACUUM;

MICROVOIDS; PARTIAL STRUCTURE RELAXATION; ULTRAHIGH VACUUM;

AMORPHOUS FILMS;

EID: 0030149870     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01424-1     Document Type: Article

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