Comparison of p-n junction and inversion-layer silicon solar cells by means of experiment and simulation

Progress in Photovoltaics: Research and Applications

Volumn 4, Issue 3, 1996, Pages 193-204

  Aberle, Armin G ^a   Kuhlmann, Burkhard ^a   Meyer, Rüdiger ^a   Hübner, Andreas ^a   Hampe, Carsten ^a   Hezel, Rudolf ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC NETWORK PARAMETERS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS;

INVERSION LAYER SOLAR CELLS; ONE SUN EFFICIENCY;

SILICON SOLAR CELLS;

EID: 0030149821     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-159X(199605/06)4:3<193::AID-PIP118>3.0.CO;2-S     Document Type: Review

References (22)

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