Etch-induced damage in high-density inductively coupled plasma etching reactors

Semiconductor Science and Technology

Volumn 11, Issue 5, 1996, Pages 816-821

  Misra, D ^a   Zhong, W ^a   Bartynski, R A ^b   Patel, V ^c   Singh, B ^c  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CRYSTAL DEFECTS; DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC VARIABLES MEASUREMENT; ELECTROCHEMICAL ELECTRODES; GATES (TRANSISTOR); PLASMA ETCHING; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

ETCH INDUCED DAMAGE; INDUCTIVELY COUPLED PLASMA ETCHING REACTORS; LANGMUIR PROBE; THIN OXIDES; UNIFORMITY;

OXIDES;

EID: 0030149812     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/5/027     Document Type: Article

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