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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 5 SUPPL. A, 1996, Pages 2863-2869

A silicon oxide antireflective layer for optical lithography using electron cyclotron resonance plasma deposition

(4) Mimura, Yoshiaki a Kiuchi, Mikiho a Anzai, Kazunori a Machida, Katsuyuki a

a NTT CORPORATION (Japan)

Author keywords

Antireflective; ECR; Gate; i line; KrFf; Lithography; LSI; Silicon oxide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION; COMPUTER SIMULATION; ELECTRON CYCLOTRON RESONANCE; ESTIMATION; INTEGRATED CIRCUIT MANUFACTURE; LSI CIRCUITS; OPTICAL PROPERTIES; OPTIMIZATION; PHOTOLITHOGRAPHY; PLASMA APPLICATIONS; SILICA;

CRITICAL DIMENSION CONTROLLABILITY; ELECTRON CYCLOTRON RESONANCE PLASMA DEPOSITION; I LINE; KRYPTON FLUORIDE LITHOGRAPHY; OPTICAL LITHOGRAPHY; SILICON OXIDE ANTIREFLECTIVE LAYER;

ANTIREFLECTION COATINGS;

EID: 0030149670 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.2863 Document Type: Article

Times cited : (8)

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