Temperature dependence and input optical power tolerance of an InGaAsP electroabsorption modulator module

Optical and Quantum Electronics

Volumn 28, Issue 5, 1996, Pages 605-612

  Tanaka, H ^a   Horita, M ^a   Matsushima, Y ^a   Takahashi, Y ^a  

^a KDDI R AND D LABORATORIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE ABSORPTION; OPTICAL COMMUNICATION EQUIPMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; THERMODYNAMIC STABILITY;

ELECTROABSORPTION MODULATORS; INPUT OPTICAL POWER TOLERANCE;

LIGHT MODULATORS;

EID: 0030149625     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00943631     Document Type: Article

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