Low-energy photoelectron diffraction of Ga 3d core levels in GaP(110), GaAs(110) and GaSb(110)

Surface Science

Volumn 352-354, Issue , 1996, Pages 94-98

  Chasse A ^a   Nowak, C ^b   Niebergall, L ^a   Rennert, P ^a   Braun, W ^c   Richter, W ^b   Zahn, D R T ^d  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c HAHN MEITNER INSTITUT   (Germany)

^d CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Photoelectron diffraction; Single crystal surfaces; Surface relaxation and reconstruction

Indexed keywords

ELECTRON DIFFRACTION; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; GALLIUM; MATHEMATICAL MODELS; PHOTOEMISSION; PHOTONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SURFACE PHENOMENA; SURFACES;

CORE LEVEL; LOW ENERGY PHOTOELECTRON DIFFRACTION; MULTIPLE SCATTERING CLUSTER MODEL; SEMICONDUCTOR SURFACES; SINGLE CRYSTAL SURFACES; SURFACE RECONSTRUCTION; SURFACE RELAXATION;

SURFACE STRUCTURE;

EID: 0030149593     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01099-8     Document Type: Article

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