An angle-resolved photoelectron spectroscopy study of the electronic structures of Si(001)2×2-Al and -In surfaces

Journal of Electron Spectroscopy and Related Phenomena

Volumn 80, Issue , 1996, Pages 177-180

  Yeom, H W ^a   Abukawa, T ^a   Takakuwa, Y ^a   Nakamura, M ^a   Kimura, M ^a   Shimatani, T ^a   Mori, Y ^a   Kakizaki, A ^b   Kono, S ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BAND STRUCTURE; CHEMICAL BONDS; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SURFACE STRUCTURE; SURFACES; SYNCHROTRON RADIATION;

ANGLE RESOLVED PHOTOELECTRON SPECTROSCOPY; BAND GAP; SURFACE STATE;

PHOTOELECTRON SPECTROSCOPY;

EID: 0030149465     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/0368-2048(96)02950-7     Document Type: Article

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