High output power operation of 1.3-μm strained MQW lasers with low threshold currents at high temperature

Optical and Quantum Electronics

Volumn 28, Issue 5, 1996, Pages 503-511

  Kito, M ^a   Kimura, S ^a   Otsuka, N ^a   Fujihara, K ^a   Ishino, M ^a   Matsui, Y ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HIGH TEMPERATURE OPERATIONS; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICE STRUCTURES;

PHOTOLUMINESCENCE LINEWIDTH; SLOPE EFFICIENCY; STRAINED MULTIQUANTUM WELL LASERS; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0030148893     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00943618     Document Type: Article

References (6)

1. E. KONDO, Y. TANAKA, M. KOBAYASHI and N. MIKI, Proc. 6th Int. Workshop on Optical Access Networks, Kyoto, Japan, 1994, p. 1.3.
2. K. UOMI, T. TSUCHIYA, M. KOMORI, A. OKA, K. SHINODA and A. OISHI, Electron. Lett. 30 (1994) 2037.
3. T. TERAKADO. K. TSURUOKO, T. ISHJDA et al., Proc. 14th IEEE Int. Semiconductor Laser Conf., Hawaii, 1994, Post-deadline papers, p. 21.
4. T. NANEGAYA, N. MATSUMOTO, N. YAMANAKA, N. IWAI, H. NAKAYAMA and A. KASUKAWA, IEEE J. Quantum Electron. 30 (1994) 578.
5. K. TANAKA, K. WAKAO, T. YAMAMOTO, H, NOBUHARA and T. FUJII, IEEE Photon. Technol. Lett. 5 (1993) 602.
6. V. MIKHAELASHIVILI, N. TESSLER, R. NAGAR et al., IEEE Photon. Technol. Lett. 6 (1994) 1293.