HREELS analysis of band bending on sulfur-covered GaAs(100) surfaces

Surface Science

Volumn 352-354, Issue , 1996, Pages 740-744

  Arens, M ^a   Kinsky, J ^a   Richter, W ^a   Eberl, K ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

Chemisorption; Electron energy loss spectroscopy; Gallium arsenide; Low index single crystal surfaces; Plasmons; Sulfur; Surface electronic phenomena

Indexed keywords

ANNEALING; CHEMISORPTION; DEPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; LOW ENERGY ELECTRON DIFFRACTION; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SULFUR;

BAND BENDING; HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY; PLASMONS; SURFACE RECONSTRUCTION;

SURFACE PHENOMENA;

EID: 0030148840     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01245-1     Document Type: Article

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