Effects of GaAs-surface roughness on the electron-beam patterning characteristics of a surface-oxide layer

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 5 B, 1996, Pages

  Ishikawa, Tomonori ^a   Tanaka, Nobuyuki ^a   Lopez, Maximo ^a   Matsuyama, Isamu ^a  

^a Lab   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; ETCHING; MASKS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; OXIDES; PHOTORESISTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE;

CHLORINE GAS ETCHING; DEGRADED THRESHOLD CHARACTERISTICS; ELECTRON BEAM PATTERNING; RESIST MASK; STEP FLOW GROWTH;

SURFACE ROUGHNESS;

EID: 0030148808     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l619     Document Type: Article

References (7)