Theoretical analysis of the strain relaxation in quantum wells grown on semiconductor superlattices

Surface Science

Volumn 352-354, Issue , 1996, Pages 865-869

  Priester, C ^a   Sferco, S J ^b   Albanesi, E A ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b Instituto de Desarrollo Tecnologico para la Industria Quimica   (Argentina)

Author keywords

Cadmium telluride; Semi empirical models and model calculations; Semiconductor semiconductor thin film structures

Indexed keywords

CALCULATIONS; HETEROJUNCTIONS; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SEMICONDUCTOR SUPERLATTICES; STRAIN; STRESS RELAXATION;

SEMI EMPIRICAL MODELS; STRAIN RELAXATION;

SURFACE PHENOMENA;

EID: 0030148307     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01289-3     Document Type: Article

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