Design and scale-up of chemical vapour deposition reactors for semiconductor processing

Chemical Engineering Science

Volumn 51, Issue 10, 1996, Pages 2119-2128

  Kleijn, C R ^a   Kuijlaars, K J ^a   Van Den Akker, H E A ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY LAYERS; BYPRODUCTS; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; MATHEMATICAL MODELS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSPORT PROPERTIES;

CHEMICAL VAPOR DEPOSITION REACTOR; DIAMETER TO HEIGHT RATIO; GAS FLOW RATE; INTERMEDIATES; PECLET NUMBER;

CHEMICAL REACTORS;

EID: 0030148295     PISSN: 00092509     EISSN: None     Source Type: Journal    
DOI: 10.1016/0009-2509(96)00069-3     Document Type: Article

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