![]() |
Volumn 32, Issue 3 PART 2, 1996, Pages 1290-1293
|
Miniaturization of an electron device using inverse problem methodology
|
Author keywords
[No Author keywords available]
|
Indexed keywords
BOUNDARY CONDITIONS;
BOUNDARY VALUE PROBLEMS;
CARRIER CONCENTRATION;
DESIGN;
ELECTRIC FIELDS;
FINITE ELEMENT METHOD;
MOSFET DEVICES;
PERMITTIVITY;
SEMICONDUCTOR DEVICE MANUFACTURE;
SENSITIVITY ANALYSIS;
THERMODYNAMIC STABILITY;
BREAKDOWN EFFECTS;
ELECTRON DEVICE MINIATURIZATION;
INVERSE PROBLEMS;
|
EID: 0030148097
PISSN: 00189464
EISSN: None
Source Type: Journal
DOI: 10.1109/20.497481 Document Type: Article |
Times cited : (1)
|
References (9)
|