SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 352-354, Issue , 1996, Pages 628-633

Growth and characterization of the Re/Si(111) interface

(5) Siokou, A a Kennou, S a,c Ladas, S a Nguyen Tan, T A b Veuillen, J Y b

a UNIVERSITY OF PATRAS (Greece)

b LABORATOIRE DE CRISTALLOGRAPHIE (France)

c UNIVERSITY OF IOANNINA (Greece)

Author keywords

Growth; Rhenium; Silicides; Silicon; Work function measurements; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHARACTERIZATION; CRYSTALLOGRAPHY; ELECTRONIC PROPERTIES; EVAPORATION; INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL SHIFT; GLANCING INCIDENCE X RAY DIFFRACTION; SUBMONOLAYER; WORK FUNCTION MEASUREMENTS;

RHENIUM;

EID: 0030147773 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(95)01217-6 Document Type: Article

Times cited : (5)

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