The excitation spectrum of the trigonal and the orthorhombic FeIn centres in silicon

Semiconductor Science and Technology

Volumn 11, Issue 5, 1996, Pages 748-752

  Tidlund, P ^a   Kleverman, M ^a   Grimmeiss, H G ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; CRYSTAL SYMMETRY; ELECTRIC CONDUCTIVITY; ELECTRON TRANSITIONS; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INDIUM; IRON; QUARTZ; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

CONDUCTION BAND MINIMA; EXCITATION SPECTRUM; IRON INDIUM CENTERS; ORTHORHOMBIC CENTERS; TRIGONAL CENTERS;

CRYSTAL DEFECTS;

EID: 0030146129     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/5/016     Document Type: Article

References (12)

1. Ludwig G W and Woodbury H H 1962 Solid State Physics (New York: Academic)
2. Chantre A and Bois D 1985 Phys. Rev. B 31 7979
3. Gehlhoff W, Emanuelsson P, Omling P and Grimmeiss H G 1993 Phys. Rev. B 15 7025
4. Nagashima H and Sadoh T 1992 Mater. Res. Soc. Symp. Proc. 262 555
5. Gehlhoff W, Irmscher K and Kreissl J 1987 Proc. 2nd Int. Autumn Meeting (GADEST) ed H Richter (Academy of Sciences of the GDR) p 262
6. van Kooten J J, Weller G A and Ammerlaan C A J 1984 Phys. Rev. B 30 4564
7. Omling P, Emanuelsson P, Gehelhoff W and Grimmeiss H G 1989 Solid State Commun. 70 807-10
8. Olajos J, Nielsen B B, Kleverman M, Omling P, Emanuelsson P and Grimmeiss H G 1988 Appl. Phys. Lett. 53 2507-9
9. Ghatnekar-Nilsson S, Kleverman M, Emanuelsson P and Grimmeiss H G 1993 Semicond. Sci. Technol. 8 1857-61
10. Emanuelsson P, Gehlhoff W, Omling P and Grimmeiss H G 1990 Phys. Rev. B 15 8560
11. Bever T, Emanuelsson P, Kleverman M and Grimmeiss H G 1989 J. Appl. Phys. Lett. 55 2541
12. Kleverman M, Thiderkvist A, Grossmann G and Grimmeiss H G 1991 Proc. 16th Int. Conf. Defects in Semiconductors (Mater. Sci. Forum 83-87) ed G Davies, G G DeLeo and M Stavola, p 125