High peak-to-valley current ratio GaAs/InGaAs/InAs double stepped quantum well resonant interband tunneling diodes at room temperature

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 5 A, 1996, Pages

  Yang, Chih Chin ^a   Huang, Kuang Chih ^a   Su, Yan Kuin ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

DOUBLE STEPPED QUANTUM WELL RESONANT INTERBAND TUNNELING DIODE; PEAK TO VALLEY CURRENT RATIO; QUANTUM CONFINEMENT EFFECT; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

TUNNEL DIODES;

EID: 0030146010     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l535     Document Type: Article

References (44)