Silicon thin films obtained by rapid thermal atmospheric pressure chemical vapour deposition

Materials Science and Engineering B

Volumn 39, Issue 1, 1996, Pages 48-51

  Monna, R ^a   Slaoui, A ^a   Lachiq, A ^a   Muller, J C ^a  

^a UMR 7005   (France)

Author keywords

Chemical vapour deposition; Doping; Microscopy; Silicon thin films

Indexed keywords

ATMOSPHERIC PRESSURE; BORON; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; HYDROGEN; MICROSCOPIC EXAMINATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

DILUTION; EPILAYERS; FOUR POINT PROBE TECHNIQUES; NOMARSKI MICROSCOPY; RAPID THERMAL PROCESSING CHEMICAL VAPOUR DEPOSITION; SPECULAR REFLECTANCE; SPREADING RESISTANCE; TRICHLOROBORINE; TRICHLOROSILANE;

THIN FILMS;

EID: 0030145883     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01533-7     Document Type: Article

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