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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 5 SUPPL. A, 1996, Pages 2583-2589

Edge effects and scattering in resonant tunneling electron devices

Author keywords

Current voltage characteristics; Edge effect; Inelastic scattering; Negative transconductance; Resonant tunneling; Self consistent

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; FINITE DIFFERENCE METHOD; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE; TUNNEL DIODES;

DOUBLE BARRIER HETEROSTRUCTURE ELECTRON DEVICES; EDGE EFFECT; GATED RESONANT TUNNELING DIODE; INELASTIC SCATTERING; NEGATIVE TRANSCONDUCTANCE; PEAK TO VALLEY CURRENT RATIO; RESONANT TUNNELING;

ELECTRON DEVICES;

EID: 0030145758 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.2583 Document Type: Article

Times cited : (4)

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