SCOPUS 정보 검색 플랫폼

Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

Volumn 60, Issue 5, 1996, Pages 476-481

Hard amorphous boron nitride films prepared by plasma CVD technique

(5) Saitoh, Hidetoshi a Satoh, Jun a Ishiguro, Takashi a Kamata, Kiichiro a Ichinose, Yukio a

a NAGAOKA UNIVERSITY OF TECHNOLOGY (Japan)

Author keywords

Amorphous film; Auger electron spectroscopy; BCl3; Boron nitride; Hard coating; Knoop hardness; Plasma chemical vapor deposition; Scanning electron microscopy; Scratch test; Transmission electron microscopy

Indexed keywords

AGGLOMERATION; AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; COMPOSITION; CRYSTAL STRUCTURE; HARDNESS; MECHANICAL PROPERTIES; MORPHOLOGY; PLASMA APPLICATIONS; PRESSURE EFFECTS; SILICON; SUBSTRATES;

BORON NITRIDE; DENDRITIC AGGREGATION; KNOOP HARDNESS; SCRATCHING TEST;

BORON COMPOUNDS;

EID: 0030145740 PISSN: 00214876 EISSN: None Source Type: Journal
DOI: 10.2320/jinstmet1952.60.5_476 Document Type: Article

Times cited : (3)

References (16)

1
- 0000343773
- M. J. Rand and J. F. Roberts: J. Electrochem. Soc., 115 (1967), 423.
- (1967) J. Electrochem. Soc. , vol.115 , pp. 423
- Rand, M.J.¹ Roberts, J.F.²

2
- 0016621074
- M. Hirayama and K. Shohno: J. Electrochem. Soc., 122 (1975), 1671.
- (1975) J. Electrochem. Soc. , vol.122 , pp. 1671
- Hirayama, M.¹ Shohno, K.²

3
- 0017016498
- S. B. Hyder and T. O. Yep: J. Electrochem. Soc., 123(1976), 1721.
- (1976) J. Electrochem. Soc. , vol.123 , pp. 1721
- Hyder, S.B.¹ Yep, T.O.²

4
- 0001561034
- T. Takahashi, H. Itoh and A. Takeuchi: J. Cryst. Growth, 47(1979), 245.
- (1979) J. Cryst. Growth , vol.47 , pp. 245
- Takahashi, T.¹ Itoh, H.² Takeuchi, A.³

5
- 0022659281
- T. Matsuda, N. Uno, H. Nakae and T. Hirai: J. Mater. Sci., 21(1986), 649.
- (1986) J. Mater. Sci. , vol.21 , pp. 649
- Matsuda, T.¹ Uno, N.² Nakae, H.³ Hirai, T.⁴

6
- 0027230633
- H. Saitoh, K. Yoshida and W. A. Yarbrough: J. Mater. Res., 8 (1993), 8.
- (1993) J. Mater. Res. , vol.8 , pp. 8
- Saitoh, H.¹ Yoshida, K.² Yarbrough, W.A.³

7
- 0025434204
- M. Okamoto, H. Yokoyama and Y. Osaka: Jpn. J. Appl. Phys., 29(1990), 930.
- (1990) Jpn. J. Appl. Phys. , vol.29 , pp. 930
- Okamoto, M.¹ Yokoyama, H.² Osaka, Y.³

8
- 85033829696
- Japanese source

9
- 0041754964
- H. Saitoh and W. A. Yarbrough: Appl. Phys. Lett., 58(1991), 2228.
- (1991) Appl. Phys. Lett. , vol.58 , pp. 2228
- Saitoh, H.¹ Yarbrough, W.A.²

10
- 0001345836
- T. Ichiki and T. Yoshida: J. Appl. Phys., 75(1994), 1330.
- (1994) J. Appl. Phys. , vol.75 , pp. 1330
- Ichiki, T.¹ Yoshida, T.²

11
- 84930193654
- T. Ikeda, Y. Kawate and Y. Hirai: J. Vac. Sci. Technol., A8(1990), 3168.
- (1990) J. Vac. Sci. Technol. , vol.A8 , pp. 3168
- Ikeda, T.¹ Kawate, Y.² Hirai, Y.³

12
- 4544350416
- R. Geick and C. H. Perry: Phys. Rev., 146(1966), 543.
- (1966) Phys. Rev. , vol.146 , pp. 543
- Geick, R.¹ Perry, C.H.²

13
- 84953678250
- R. Trehan, Y. Lifshitz and W. Rabalais: J. Vac. Sci. Technol., A8(1990), 4026.
- (1990) J. Vac. Sci. Technol. , vol.A8 , pp. 4026
- Trehan, R.¹ Lifshitz, Y.² Rabalais, W.³

14
- 0025463562
- K. Kamata, T. Inoue, K. Maruyama and T. Tanabe: Jpn. J. Appl. Phys., 29(1990), L1203.
- (1990) Jpn. J. Appl. Phys. , vol.29
- Kamata, K.¹ Inoue, T.² Maruyama, K.³ Tanabe, T.⁴

15
- 36449001720
- K. Kamata, T. Inoue, K. Sugai, H. Saitoh and K. Maruyama: J. Appl. Phys., 78(1995), 1394.
- (1995) J. Appl. Phys. , vol.78 , pp. 1394
- Kamata, K.¹ Inoue, T.² Sugai, K.³ Saitoh, H.⁴ Maruyama, K.⁵

16
- 85033821881
- Japanese source

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.