SCOPUS 정보 검색 플랫폼

Journal of Physics and Chemistry of Solids

Volumn 57, Issue 5, 1996, Pages 563-570

Chemical vapor deposition precursor chemistry. 5. The photolytic laser deposition of aluminum thin films by chemical vapor deposition

(5) Glass Jr , John A a Hwang, Seong Don b Datta, Saswatti c Robertson, Brian b Spencer, James T a

a Center for Science and Technology (United States)

b UNIVERSITY OF NEBRASKA LINCOLN (United States)

c IBM (United States)

Author keywords

A. electronic materials; A. organometallic compounds; A. thin films; B. vapor deposition; D. microstructure

Indexed keywords

ALUMINUM; CALCULATIONS; CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; DISSOCIATION; FILM GROWTH; IRRADIATION; LASER APPLICATIONS; MASS SPECTROMETRY; ORGANOMETALLICS; PHOTOLYSIS; QUANTUM THEORY;

ALUMINUM NITROGEN ANTIBONDING INTERACTION; CHEMICAL VAPOR DEPOSITION PRECURSOR CHEMISTRY; ELECTRONIC MATERIALS; LASER MICROPROBE MASS ANALYSIS; LIGAND DISSOCIATION PROCESSES; PHOTOLYTIC LASER DEPOSITION; QUADRUPOLE; SEMI EMPIRICAL QUANTUM CHEMICAL CALCULATIONS; X RAY EMISSION SPECTROSCOPY;

THIN FILMS;

EID: 0030145355 PISSN: 00223697 EISSN: None Source Type: Journal
DOI: 10.1016/0022-3697(96)80011-4 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.