Time-resolved optical second harmonic generation study of the electric field dynamics at a metal-semiconductor interface

Surface Science

Volumn 352-354, Issue , 1996, Pages 807-811

  De Jong, W ^a   Van Etteger, A F ^a   Van 'T Hof, C A ^a   Van Hall, P J ^b   Rasing, Th ^a  

^a Research Institute for Materials   (Netherlands)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Carrier dynamics; Gallium arsenide; Schottky barrier; Second harmonic generation

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; DYNAMICS; ELECTRIC FIELDS; ENERGY GAP; LASER PULSES; MONTE CARLO METHODS; QUANTUM THEORY; SECOND HARMONIC GENERATION; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY;

BANDGAP EXCITATION; CARRIER DYNAMICS; ELECTRIC FIELD DYNAMICS; METAL SEMICONDUCTOR INTERFACES; SCHOTTKY BARRIER; SUB PICOSECOND DECAY TIMES; TIME RESOLVED OPTICAL SECOND HARMONIC GENERATION;

INTERFACES (MATERIALS);

EID: 0030145160     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01280-X     Document Type: Article

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