Ballistic electron emission microscopy of InAs grown on GaAs(100)

Surface Science

Volumn 352-354, Issue , 1996, Pages 861-864

  Ke, Mao Long ^a   Westwood, D I ^a   Matthai, C C ^a   Williams, R H ^b  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

Heterojunctions; Metal semiconductor interfaces; Semiconductor semiconductor thin film structures

Indexed keywords

ELECTRON MICROSCOPY; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; INTERFACES (MATERIALS); RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THIN FILMS;

BALLISTIC ELECTRON EMISSION MICROSCOPY; BARRIER FORMATION; BARRIER HEIGHT; LATERAL MOMENTUM CONSERVATION;

SURFACE STRUCTURE;

EID: 0030145086     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01288-5     Document Type: Article

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