Measurement of sheet resistance of cross microareas using a modified van der Pauw method

Semiconductor Science and Technology

Volumn 11, Issue 5, 1996, Pages 805-811

  Sun, Yicai ^a   Shi, Junsheng ^b   Meng, Qinghao ^a  

^a Hebei Technical University   (China)

^b YUNNAN NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; FINITE ELEMENT METHOD; INTEGRATED CIRCUIT MANUFACTURE; MICROSCOPES; NUMERICAL METHODS; PROBES; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS;

BOUNDARY EFFECT; CROSS MICROAREA; MODIFIED VAN DER PAUW METHOD; P-N JUNCTIONS; SHEET RESISTANCE;

ELECTRIC RESISTANCE MEASUREMENT;

EID: 0030144762     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/5/025     Document Type: Article

References (11)

1. Perloff D S et al 1977 J. Electrochem. Soc. 124 582-90
2. Hughes F D 1972 Acta Electron. 15 43
3. ASTM F398-87 1987 Test method for majority carrier concentration in semiconductors by measurement of the wavelength of the plasma resonance minimum
4. ASTM F525-88 1988 Method for measuring resistivity of silicon wafers using a spreading resistance probe
5. ASTM F84 1970 Measuring resistivity of silicon slices with a collinear four-probe
6. Swartzendruber L J 1964 Solid-State Electron. 7 413-22
7. Rymaszewski R 1967 Electron. Lett. 3 57-8
8. van der Pauw L J 1958 Philips Res. Rep. 13 1-19
9. Crossley P A and Ham W E 1973 J. Electron. Mater. 2 465-83
10. David J M and Buehler MG 1977 Solid-State Electron. 20 539-43
11. Buehler M G and Thurber W R 1978 J. Electrochem. Soc. 125 645-50