Transmission electron microscopy characterisation of ion beam synthesised FeSi2 layers

Thin Solid Films

Volumn 277, Issue 1-2, 1996, Pages 90-97

  Tavares, J ^a,b   Bender, H ^a   Maex, K ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Electron diffraction; Epitaxy; Silicides; Transmission electron microscopy

Indexed keywords

CHARACTERIZATION; DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION BEAMS; SEMICONDUCTING SILICON COMPOUNDS; STACKING FAULTS; SUBSTRATES; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL RELATIONSHIP; IRON DISILICIDE; REACTIVE DEPOSITION EPITAXY; SILICIDES; SOLID PHASE EPITAXY;

SEMICONDUCTING FILMS;

EID: 0030143818     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08008-2     Document Type: Article

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