Oxidation of a Si(001) surface mediated by repetitive adsorption/desorption cycles of Cs: A metastable deexcitation spectroscopy study

Applied Surface Science

Volumn 99, Issue 1, 1996, Pages 21-26

  Yamada, Kenji ^a   Nishigaki, Satoshi ^b  

^a ISHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANNEALING; BAND STRUCTURE; CESIUM; CHARGE TRANSFER; DESORPTION; ELECTRON ENERGY LEVELS; ELECTRONS; INTERFACES (MATERIALS); OXIDATION; SEMICONDUCTING SILICON; SPECTROSCOPY;

ELECTRON TRANSFER; METASTABLE DEEXCITATION SPECTROSCOPY;

SURFACE PHENOMENA;

EID: 0030143813     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00454-8     Document Type: Article

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