Selective area epitaxy of InGaAs/InGaAsP quantum wells studied by magnetotransport

Semiconductor Science and Technology

Volumn 11, Issue 5, 1996, Pages 735-740

  Martin, R W ^a   Wong, S L ^b   Symons, D M ^b   Nicholas, R J ^b   Gibbon, M A ^c   Thrush, E J ^c   Stagg, J P ^c  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CARRIER CONCENTRATION; COMPOSITION; CRYSTAL STRUCTURE; MAGNETIC VARIABLES MEASUREMENT; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SILICA; TRANSPORT PROPERTIES;

MAGNETOTRANSPORT; POISSON EQUATIONS; SCHRODINGER EQUATIONS; SELECTIVE AREA EPITAXY; SILICA MASKS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030143703     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/5/014     Document Type: Article

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