Application of low-defect reactive ion etching in Cl2-BCl3 plasma in combination with overgrowth for formation of GaAs/AlGaAs submicrometre structures

Semiconductor Science and Technology

Volumn 11, Issue 5, 1996, Pages 797-800

  Timofeev, F N ^a,b   Gurevich, S A ^b   Smirnitskii, V B ^b   Gladysheva, L B ^b   Yavich, B S ^b   Usikov, A ^b  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; HETEROJUNCTIONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR PLASMAS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; THICK FILMS;

EPITAXIAL OVERGROWTH; LOW DEFECT REACTIVE ION ETCHING; SUBMICROMETRE STRUCTURES; VACUUM CHAMBER;

REACTIVE ION ETCHING;

EID: 0030143129     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/5/023     Document Type: Article

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