Molecular beam epitaxy of CuGaSe2 on GaAs substrate using metallorganic copper and gallium precursors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 5 A, 1996, Pages

  Shirakata, Sho ^a   Tamura, Kazuhisa ^a   Isomura, Shigehiro ^a  

^a EHIME UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SELENIUM; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

CHALCOPYRITE SEMICONDUCTORS; COPPER GALLIUM SELENIDE; CYCLOPENTADIENYLCOPPERTRIETHYLPHOSPHINE; METALLORGANIC MOLECULAR BEAM EPITAXY; PHOTOREFLECTANCE; TRIETHYLGALLIUM;

COPPER COMPOUNDS;

EID: 0030142916     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l531     Document Type: Article

References (14)