Structural study of amorphous SiNx:H films produced by plasma-enhanced chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 5 SUPPL. A, 1996, Pages 2557-2560

  Wakita, Kazuki ^a   Hayashi, Hideki ^a   Nakayama, Yoshikazu ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

a SiNx:H; Amorphous silicon nitrogen alloy; Film structure; X ray diffraction

Indexed keywords

AMORPHOUS ALLOYS; CALCULATIONS; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; DECOMPOSITION; GLOW DISCHARGES; MATHEMATICAL MODELS; PLASMA APPLICATIONS; PROBABILITY DENSITY FUNCTION; SILICON ALLOYS; X RAY CRYSTALLOGRAPHY;

ATOMIC DENSITY FUNCTION; BOND CONFIGURATION; BONDING MODEL; FILM STRUCTURE; GLOW DISCHARGE DECOMPOSITION; HYDROGENATED AMORPHOUS SILICON NITROGEN ALLOY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCATTERING INTENSITY; X RAY DIFFRACTION INTENSITY;

AMORPHOUS FILMS;

EID: 0030142328     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2557     Document Type: Article

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