Atomic layer epitaxy of ZnS by low-pressure horizontal metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 5 SUPPL. A, 1996, Pages 2749-2753

  Liu, Chun Hsing ^a   Yokoyama, Meiso ^a   Su, Yan Kuin ^a   Lee, Nien Chung ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

ALE; Crystalline; MOCVD; Monolayer; Morphology; Photoluminescence; Self limiting growth

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULES; MONOLAYERS; MORPHOLOGY; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THERMAL EFFECTS;

ATOMIC LAYER EPITAXY; BROAD EMISSION; LOW PRESSURE HORIZONTAL METALLORGANIC CHEMICAL VAPOR DEPOSITION; NEAR BAND EDGE EMISSION; SELF ACTIVATED EMISSION; SELF LIMITING GROWTH; SUBSTRATE TEMPERATURE;

ZINC SULFIDE;

EID: 0030142063     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2749     Document Type: Article

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