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Volumn 351, Issue 1-3, 1996, Pages 43-52
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Adsorbed states and thermal reactions of N2O on Si(100) below room temperature: Desorption induced by dissociation
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Author keywords
Chemisorption; Low index single crystal surfaces; Nitrogen oxides; Oxidation; Physical adsorption; Silicon; Thermal desportion; X ray photoelectron spectroscopy
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Indexed keywords
CHEMISORPTION;
DISSOCIATION;
GAS ADSORPTION;
LOW ENERGY ELECTRON DIFFRACTION;
NITROGEN OXIDES;
OXIDATION;
REACTION KINETICS;
SINGLE CRYSTALS;
SURFACES;
TEMPERATURE PROGRAMMED DESORPTION;
THERMAL EFFECTS;
X RAY PHOTOELECTRON SPECTROSCOPY;
ADSORPTION STATES;
LOW INDEX SINGLE CRYSTAL SURFACES;
THERMAL DESORPTION;
SEMICONDUCTING SILICON;
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EID: 0030141998
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/0039-6028(95)01272-9 Document Type: Article |
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Times cited : (14)
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References (20)
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