Characterization and residue elimination of hot aluminum etching in a transformer coupled plasma etcher

Journal of the Electrochemical Society

Volumn 143, Issue 5, 1996, Pages 1763-1768

  Kopalidis, Peter M ^a,b   Vertommen, Johan ^a,c   Badenes, Gonçal ^a  

^a IMEC   (Belgium)

^b EATON CORPORATION   (United States)

^c LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHARACTERIZATION; MATHEMATICAL MODELS; PLASMA DEVICES; PRESSURE EFFECTS; SILICON WAFERS; THERMAL EFFECTS; THIN FILMS;

ETCH RATE; HOT ALUMINUM; POSTETCH RESIDUES; RESIDUE ELIMINATION; RESIST SELECTIVITY; SELF BIAS VOLTAGE; SILICON CONTAINING PRECIPITATES; TRANSFORMER COUPLED PLASMA ETCHER;

PLASMA ETCHING;

EID: 0030141877     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836713     Document Type: Article

References (9)

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