Influence of surface relaxation on the electronic states of the α-Al2O3 (0001) surface: A self-consistent tight-binding approach

Surface Science

Volumn 352-354, Issue , 1996, Pages 755-759

  Gautier Soyer, M ^a   Jollet, F ^a   Noguera, C ^b  

^a CEA SACLAY   (France)

^b UNIVERSITÉ PARIS SUD   (France)

Author keywords

Aluminum oxide; Computer simulations; Insulating surfaces; Low index single crystal surfaces; Surface electronic phenomena; Surface relaxation and reconstruction

Indexed keywords

ALUMINA; BAND STRUCTURE; CHARGE TRANSFER; CHEMICAL BONDS; COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; ELECTROSTATICS; ENERGY GAP; RELAXATION PROCESSES; SINGLE CRYSTALS; SURFACE STRUCTURE; SURFACES;

CONDUCTION BAND; ELECTROSTATIC EFFECTS; SELF CONSISTENT TIGHT BINDING METHOD; SURFACE RECONSTRUCTION; SURFACE RELAXATION;

SURFACE PHENOMENA;

EID: 0030141738     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01242-7     Document Type: Article

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