Low pressure chemical vapour deposition of polycrystalline silicon: Validation and assessment of reactor models

Chemical Engineering Science

Volumn 51, Issue 10, 1996, Pages 2109-2118

  Weerts, W L M ^a,b   De Croon, M H J M ^a   Marin, G B ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; COMPUTER SIMULATION; MATHEMATICAL MODELS; POLYCRYSTALLINE MATERIALS; REACTION KINETICS; SILICON WAFERS;

ASSESSMENT; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE SILICON; RADIAL NON-UNIFORMITY; SURFACE TO VOLUME RATIO; VALIDATION;

CHEMICAL VAPOR DEPOSITION;

EID: 0030141728     PISSN: 00092509     EISSN: None     Source Type: Journal    
DOI: 10.1016/0009-2509(96)00068-1     Document Type: Article

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