Dephasing in the gain region of II-VI semiconductor nanocrystals

Journal of the Optical Society of America B: Optical Physics

Volumn 13, Issue 5, 1996, Pages 1039-1044

  Giessen, H ^a,d   Fluegel, B ^a   Mohs, G ^a   Hu, Y Z ^a   Peyghambarian, N ^a   Woggon, U ^b   Klingshirn, C ^b   Thomas, P ^c   Koch, S W ^c  

^a UNIVERSITY OF ARIZONA   (United States)

^b UNIVERSITY OF KARLSRUHE   (Germany)

^c PHILIPPS UNIVERSITY MARBURG   (Germany)

^d MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ELECTRON SCATTERING; ELECTRON TRANSITIONS; ENERGY GAP; FAST FOURIER TRANSFORMS; GAIN MEASUREMENT; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TRANSPARENCY;

CADMIUM SELENIDE; CADMIUM SULFUR SELENIDE; DEPHASING TIME; GAIN REGION; MICROCRYSTALS; QUANTUM CONFINEMENT; SPECTRAL HOLE BURNING; TRANSPARENCY POINT;

NANOSTRUCTURED MATERIALS;

EID: 0030141682     PISSN: 07403224     EISSN: None     Source Type: Journal    
DOI: 10.1364/JOSAB.13.001039     Document Type: Article

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