Ion implantation into fullerene

Fullerene Science and Technology

Volumn 4, Issue 3, 1996, Pages 535-552

  Fink, D ^a   Krauser, J ^a   Nagengast, D ^a   Behar, M ^b   Kaschny, J ^b   Grande, P ^b   Hnatowicz, V ^c   Vacik, J ^c   Palmetshofer, L ^d  

^a HAHN MEITNER INSTITUT   (Germany)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^c NUCLEAR PHYSICS INSTITUTE   (Czech Republic)

^d JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Amorphous carbon; Ar; B; Bi; Cs; Diffusion; Fullerene; H; Ion Implantation; Kr; Li; NDP; NRA; Pb; Range straggling; Ranges; RBS; Xe

Indexed keywords

AMORPHOUS MATERIALS; CARBON; DIFFUSION; ION IMPLANTATION; IONS; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SUBSTRATES; THIN FILMS;

DEPTH PROFILES; ENERGETIC IONS; HEAVY PROJECTILE IONS; POST IMPLANTATIONAL RADIATION ENHANCED DIFFUSION; SILICON SUBSTRATES;

FULLERENES;

EID: 0030141661     PISSN: 1064122X     EISSN: None     Source Type: Journal    
DOI: 10.1080/10641229608001569     Document Type: Article

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