SiO2 etching by M = O helicon plasma

Plasma Sources Science and Technology

Volumn 5, Issue 2, 1996, Pages 181-186

  Nogami, H ^a   Ogahara, Y ^a   Mashimo, K ^a   Nakagawa, Y ^a   Tsukada, T ^a  

^a Canon ANELVA Technix Corporation

Author keywords

[No Author keywords available]

Indexed keywords

DISSOCIATION; PLASMA SOURCES; SILICA; SILICON WAFERS;

CONTINUOUS DISCHARGE; HELICON PLASMAS;

PLASMA ETCHING;

EID: 0030134271     PISSN: 09630252     EISSN: None     Source Type: Journal    
DOI: 10.1088/0963-0252/5/2/010     Document Type: Article

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