Growth mode and interface structure of Ag on the HF-treated Si(111):H surface

Surface Science

Volumn 350, Issue 1-3, 1996, Pages 229-238

  Nishiyama, A ^a,c   Ter Horst, G ^a   Zagwijn, P M ^a   Van Den Hoven, G N ^a   Frenken, J W M ^a   Garten, F ^b   Schlatmann, A R ^b   Vrijmoeth, J ^b  

^a FOM INSTITUTE AMOLF   (Netherlands)

^b UNIVERSITY OF GRONINGEN   (Netherlands)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

Epitaxy; Medium energy ion scattering (MEIS); Metal semiconductor interfaces; Schottky barrier; Silicon; Silver

Indexed keywords

DEPOSITION; DESORPTION; EPITAXIAL GROWTH; HYDROGEN; INTERFACES (MATERIALS); MONOLAYERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SURFACE STRUCTURE; SURFACE TREATMENT; THICK FILMS;

ELASTIC RECOIL DETECTION ANALYSIS; MEDIUM ENERGY ION SCATTERING; PREFERENTIAL AZIMUTHAL ORIENTATION; SCHOTTKY BARRIER HEIGHTS; VOLMER-WEBER MODE;

SILVER;

EID: 0030130338     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01073-4     Document Type: Article

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