In situ boron-doped polycrystalline silicon films prepared by a novel low-pressure chemical vapour deposition method using a Si2H6-B2H6-N2 gas system

Journal of Physics D: Applied Physics

Volumn 29, Issue 4, 1996, Pages 1088-1092

  Nam, S H ^a   Kim, B H ^a   Moon, J ^a   Shim, T E ^a   Lee, J G ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GASES; PRESSURE EFFECTS; SILICA; SILICON; TEXTURES; THERMAL EFFECTS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SILICON FILMS;

POLYCRYSTALLINE MATERIALS;

EID: 0030130275     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/29/4/024     Document Type: Article

References (8)

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