Formation of the (001) textured Mn5Ge3 phase by solid state reaction of thin multilayered films

Journal of Alloys and Compounds

Volumn 236, Issue 1-2, 1996, Pages 111-116

  Matsui, T ^a   Fukushima, T ^a   Shigematsu, M ^a   Mabuchi, H ^a   Morii, K ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

Mn11Ge8; Mn5Ge3; Multilayered film; Preferred orientation; Solid state reaction

Indexed keywords

ANNEALING; CHEMICAL REACTIONS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; INTERDIFFUSION (SOLIDS); ION BEAMS; MULTILAYERS; PHASE COMPOSITION; SPUTTERING; TEXTURES; THIN FILMS;

ATOMIC ARRANGEMENT; HEAT OF FORMATION RULE; ION BEAM SPUTTERING; MULTILAYERED FILM; PREFERRED REACTION; SOLID STATE PHASE FORMATION; SOLID STATE REACTION;

MANGANESE COMPOUNDS;

EID: 0030130255     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-8388(95)02100-0     Document Type: Article

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