Influence of hot carrier transport on the transient response of an InGaAs/InAlAs metal-semiconductor schottky diode structure

IEEE Transactions on Electron Devices

Volumn 43, Issue 4, 1996, Pages 664-665

  Salem, Ali F ^a   Brennan, Kevin F ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CALCULATIONS; ELECTRIC FIELDS; HOT CARRIERS; MONTE CARLO METHODS; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; THERMODYNAMIC PROPERTIES;

HETEROSTRUCTURE SCHOTTKY CONTACT; HOT CARRIER TRANSPORT; METAL SEMICONDUCTOR METAL PHOTODETECTORS;

HETEROJUNCTIONS;

EID: 0030129711     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485551     Document Type: Article

References (10)

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