Nonlinear exposure dependence of the holographic recording and relaxational structural changes in amorphous As2S3 films

Journal of Applied Physics

Volumn 79, Issue 7, 1996, Pages 3397-3402

  Ozols, A ^a   Salminen, O ^b   Riihola, P ^b   Monkkonen P ^b  

^a UNIVERSITY OF LATVIA   (Latvia)

^b UNIVERSITY OF EASTERN FINLAND   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CALCULATIONS; ELECTROMAGNETIC WAVE DIFFRACTION; HOLOGRAPHY; MATHEMATICAL MODELS; OPTICAL RECORDING; REFRACTIVE INDEX; RELAXATION PROCESSES; RESIDUAL STRESSES; STRUCTURE (COMPOSITION);

ARSENIC SILICIDE; DIFFRACTION EFFICIENCY; EXPOSURE THRESHOLD; HOLOGRAPHIC RECORDING; NONLINEARITY; PHOTOINDUCED STRUCTURAL CHANGES; RELAXATIONAL STRUCTURAL CHANGES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030129213     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361386     Document Type: Article

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