Comparative study of SIMOX structures using four analytical techniques

Surface and Interface Analysis

Volumn 24, Issue 4, 1996, Pages 243-251

  Fukarek, W ^a   Yankov, R A ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ELLIPSOMETRY; INFRARED RADIATION; INTERFACES (MATERIALS); ION IMPLANTATION; LIGHT REFLECTION; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SEPARATION; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

LAYER THICKNESS; OPTICAL MULTILAYER MODEL; POLARIZED INFRARED REFLECTION; SEPARATION BY IMPLANTED OXYGEN; SILICON ISLANDS; VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030129036     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199604)24:4<243::AID-SIA106>3.0.CO;2-H     Document Type: Review

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