In-plane-gate transistors on nonepitaxial silicon directly written by focused-ion-beam implantation

Applied Physics Letters

Volumn 68, Issue 18, 1996, Pages 2538-2540

  Crell, C ^a   Wieczorek, K ^a   Schreiber, H U ^a   Wieck, A D ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL ACTIVATION; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; GALLIUM; HETEROJUNCTIONS; ION IMPLANTATION; OHMIC CONTACTS; OXYGEN; SILICON ON INSULATOR TECHNOLOGY;

BREAKDOWN VOLTAGE; DRAIN CURRENTS; FOCUSED ION BEAM IMPLANTATION; GEOMETRICAL CHANNEL WIDTH; IN PLANE GATE TRANSISTORS; RAPID THERMAL ANNEALING;

TRANSISTORS;

EID: 0030128958     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116176     Document Type: Article

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