Valence band structure of very narrow InGaAs/InP quantum wells

Solid State Communications

Volumn 98, Issue 4, 1996, Pages 297-301

  Dujardin, F ^a   Marreaud N ^a   Laurenti, J P ^a  

^a UNIVERSITÉ DE LORRAINE   (France)

Author keywords

A. quantum wells; A. semiconductors; D. electronic band structure; D. optical properties; D. spin orbit effects

Indexed keywords

BAND STRUCTURE; CALCULATIONS; ELECTRONIC STRUCTURE; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

CONFINEMENT ENERGY; LUTTINGER-KOLN HAMILTONIAN; SPIN ORBIT COUPLING; SPIN ORBIT EFFECT; STRAIN FREE STRUCTURES; VALENCE BAND STRUCTURE; VERY NARROW LATTICE MATCHED QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030128816     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00043-9     Document Type: Article

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