Photochemical removal of organic contaminants from silicon surface at room temperature

Applied Physics Letters

Volumn 68, Issue 16, 1996, Pages 2243-2245

  Fominski, V Yu ^a   Naoumenko, O I ^a   Nevolin, V N ^a   Alekhin, A P ^b   Markeev, A M ^b   Vyukov, L A ^b  

^a NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

^b KAPITZA INSTITUTE FOR PHYSICAL PROBLEMS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CHEMICAL BONDS; FLUORINE COMPOUNDS; GASES; IMPURITIES; ORGANIC COMPOUNDS; OXYGEN; PHOTOCHEMICAL REACTIONS; REMOVAL; SEMICONDUCTING SILICON; SURFACES; ULTRAVIOLET RADIATION;

NITROGEN TRIFLUORIDE; PHOTOCHEMICAL ORGANIC CONTAMINANT REMOVAL; REAGENTS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0030128515     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115872     Document Type: Article

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